050-7237 rev a 12-2005 final data sheet with mos 7 format 600v 46a 0.083 ? apt47n60bcf apt47n60scf APT47N60BCFG* apt47n60scfg* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speci?ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 4 (v gs = 10v, i d = 29a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 600v, v gs = 0v, t c = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.9ma) symbol v dss i d i dm v gs p d t j ,t stg t l dv / dt i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage continuoustotal power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 480v, i d = 46a, t j = 125c) avalanche current 2 repetitive avalanche energy 2 single pulse avalanche energy 3 unit volts amps volts watts w/c c v/ns amps mj static electrical characteristics symbol b (vr)ds r ds(on) i dss i gss v gs(th) unit volts ohms a na volts apt47n60b_scf(g) 600 46 29 115 30 417 1.67 -55 to 150 260 80 20 1 1800 ? ultra low r ds(on) ? intrinsic fast-recovery body diode ? low miller capacitance ? extreme low reverse recovery charge ? ultra low gate charge, q g ? ideal for zvs applications ? avalanche energy rated ? popular to-247 or surface mount d 3 package ? extreme dv / dt rated super junction fredfet min typ max 600 0.083 6 5000 100 3 4 5 apt website - http://www.advancedpower.com c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in?neon technologies ag. "coolmos" is a trade- mark of in?neon technologies ag." to-247 d 3 pak g d s (s) (b) downloaded from: http:///
050-7237 rev a 12-2005 dynamic characteristics apt47n60bcf_scf(g) single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 d = 0.9 0.05 final data sheet with mos 7 format peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 4 (v gs = 0v, i s = -46a) peak diode recovery dv / dt 7 reverse recovery time(i s = -46a, di / dt = 100a/s) reverse recovery charge(i s = -46a, di / dt = 100a/s) peak recovery current(i s = -46a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 46 115 1.2 40 210 350 2.0 5.4 18 28 symbol r jc r ja min typ max 0.30 62 unit c/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f 3 starting t j = +25c, l = 36.0mh, r g = 25 ? , peak i l = 10a apt reserves the right to change, without notice, the speci?cations and information contained herein . t j = 25c t j = 125c t j = 25c t j = 125c t j = 25c t j = 125c symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 5 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 46a @ 25c resistive switching v gs = 15v v dd = 380v i d = 46a @ 25c r g = 3.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 46a, r g = 4.3 ? inductive switching @ 125c v dd = 400v, v gs = 15v i d = 46a, r g = 4.3 ? 4 pulse test: pulse width < 380 s, duty cycle < 2% 5 see mil-std-750 method 3471 6 eon includes diode reverse recovery. see ?gures 18, 20. 7 maximum 125c diode commutation speed = di/dt 600a/s min typ max 7290 1735 41 255 43 135 30 30 100 15 885 590 1270 725 unit pf nc ns j downloaded from: http:///
050-7237 rev a 12-2005 typical performance curves apt47n60bcf_scf(g) scope pics are placed with the place command and then scaled to 50% scope pics are placed with the place command and then scaled to 50% 7v 5v 6v 6.5v 15, 10 & 7.5v 6050 40 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 v ds > i d(on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0 2 4 6 8 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t j = -55c t j = +25c t j = +125c normalized to v gs = 10v @ 23a v gs =10v v gs =20v 8070 60 50 40 30 20 10 0 5045 40 35 30 25 20 15 10 50 2.52.0 1.5 1.0 0.5 0 i d = 23a v gs = 10v 0.1430.157 0.008410.133 power (watts) rc model junction temp. ( c) case temperature. ( c) 5.5v downloaded from: http:///
050-7237 rev a 12-2005 apt47n60bcf_scf(g) scope pics are placed with the place command and then scaled to 50% scope pics are placed with the place command and then scaled to 50% t c =+25c t j =+150c single pulse operation here limited by r ds (on) c rss c iss c oss v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 115 5010 51 1614 12 10 86 4 2 0 40 4 10 4 10 3 10 2 10 1 200100 10 1 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage 100s 1ms 10ms switching energy (mj) t d(on) and t d(off) (ns) switching energy (mj) t r and t f (ns) e on e off i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resist ance t j =+150c t j =+25c i d = 46a t d(on) t d(off) v dd = 400v r g = 4.3 ? t j = 125c l = 100h v dd = 400v r g = 4.3 ? t j = 125c l = 100h e on includes diode reverse recovery. v dd = 400v r g = 4.3 ? t j = 125c l = 100h t r t f 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 1 10 100 600 0 100 200 300 400 500 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v ds =300v v ds =120v v ds =480v 300250 200 150 100 50 0 25002000 1500 1000 500 0 e on e off 9080 70 60 50 40 30 20 10 0 35003000 2500 2000 1500 1000 500 0 v dd = 400v i d = 46a t j = 125c l = 100h e on includes diode reverse recovery. downloaded from: http:///
050-7237 rev a 12-2005 typical performance curves apt47n60bcf_scf(g) scope pics are placed with the place command and then scaled to 50% figure 19, turn-off switching waveforms and de?nitions figure 18, turn-on switching waveforms and de?nitions drain current drain voltage gate voltage t j 125c 10% t d(on) 90% 5% t r 5% 10% apt30dq60 i d v ds d.u.t. v dd g figure 20, inductive switching test circuit t j 125c 10% 0 t d(off) t f switching energy 90% 90% drain voltage gate voltage drain current switching energy to - 247 package outline d 3 pak package outline e3 e1 sac: tin, silver, copper 100% sn 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4 .98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 downloaded from: http:///
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